|
|
PDF PMDPB55XP Data sheet ( Hoja de datos )
| Número de pieza | PMDPB55XP | |
| Descripción | dual P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMDPB55XP (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
PMDPB55XP
20 V, dual P-channel Trench MOSFET
Rev. 3 — 4 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC/DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -4.5 A
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = -4.5 V; ID = -3.4 A; Tj = 25 °C
resistance
- 55 70 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
1 page  
NXP Semiconductors
PMDPB55XP
20 V, dual P-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
10 0.05
0.02
0.01
1
0
017aaa398
10-1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
1 0.01
0
017aaa399
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 6 cm2
10-1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB55XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 4 June 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
PMDPB55XP
20 V, dual P-channel Trench MOSFET
2.1
0.65 0.65
0.49 0.49
0.875
2.25
0.875
0.3 0.4
(6×) (6×)
1.05 1.15
(2×) (2×)
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
Fig 19. Reflow soldering footprint for SOT1118 (DFN2020-6)
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
sot1118_fr
PMDPB55XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 4 June 2012
© NXP B.V. 2012. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMDPB55XP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMDPB55XP | dual P-channel Trench MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |