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PDF PMZB350UPE Data sheet ( Hoja de datos )
| Número de pieza | PMZB350UPE | |
| Descripción | single P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMZB350UPE
20 V, single P-channel Trench MOSFET
1 August 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• 1.8 kV ESD protected
1.3 Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-8 -
8V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -1.4 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C
resistance
- 330 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
PMZB350UPE
20 V, single P-channel Trench MOSFET
Symbol
Rth(j-sp)
103
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 35 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2, t ≤ 5 s.
017aaa109
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
0.02
0 0.01
10
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa110
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1
0.05
0
0.02
0.01
10
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2012
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMZB350UPE v.1
20120801
PMZB350UPE
20 V, single P-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZB350UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2012
© NXP B.V. 2012. All rights reserved
11 / 14
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