|
|
PDF PMZ250UN Data sheet ( Hoja de datos )
| Número de pieza | PMZ250UN | |
| Descripción | N-channel TrenchMOS extremely low level FET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMZ250UN (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
BOTTOM VIEW
PMZ250UN
N-channel TrenchMOS extremely low level FET
Rev. 01 — 21 February 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Lower on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I Fast switching
1.3 Applications
I Driver circuits
I DC-to-DC converters
I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 20 V
I RDSon ≤ 300 mΩ
I ID ≤ 2.28 A
I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT883 (SC-101)
Symbol
D
G
mbb076 S
1 page  
NXP Semiconductors
PMZ250UN
N-channel TrenchMOS extremely low level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 20 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8
VGS = 1.8 V; ID = 0.075 A; see Figure 6 and 8
ID = 1 A; VDS = 10 V; VGS = 4.5 V; see
Figure 11 and 12
VGS = 0 V; VDS = 20 V; f = 1 MHz; see
Figure 14
VDS = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω
IS = 0.3 A; VGS = 0 V; see Figure 13
Min Typ Max Unit
20 - - V
18 - - V
0.45 0.7
0.25 -
--
0.95 V
-V
1.15 V
- - 1 µA
- - 100 µA
- 10 100 nA
- 250 300 mΩ
- 400 480 mΩ
- 320 400 mΩ
- 420 600 mΩ
- 0.89 - nC
- 0.13 - nC
- 0.18 - nC
- 45 - pF
- 11 - pF
- 7 - pF
- 4.5 - ns
- 10 - ns
- 18.5 - ns
- 5 - ns
- 0.80 1.2 V
PMZ250UN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
5 of 13
5 Page 
NXP Semiconductors
9. Revision history
Table 6. Revision history
Document ID
Release date
PMZ250UN_1
20080221
PMZ250UN
N-channel TrenchMOS extremely low level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZ250UN_1
Product data sheet
Rev. 01 — 21 February 2008
© NXP B.V. 2008. All rights reserved.
11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PMZ250UN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMZ250UN | N-channel TrenchMOS extremely low level FET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |