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PDF PS9331L2 Data sheet ( Hoja de datos )
| Número de pieza | PS9331L2 | |
| Descripción | 2.5A OUTPUT CURRENT HIGH CMR IGBT GATE DRIVE 6-PIN SDIP PHOTOCOUPLER | |
| Fabricantes | California Eastern Labs | |
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A Business Partner of Renesas Electronics Corporation.
PS9331L,PS9331L2
Preliminary Data Sheet
Specifications in this document are tentative and subject to change.
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
Nov 30, 2012
DESCRIPTION
The PS9331L and PS9331L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and power MOSFETs on the output side on one chip.
The PS9331L and PS9331L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9331L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9331L and PS9331L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9331L is lead bending type (Gull-wing) for surface mounting.
The PS9331L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
• Long creepage distance (8 mm MIN.: PS9331L2)
• Half size of 8-pin DIP
• Peak output current (2.5 A MAX., 2.0 A MIN.)
• High speed switching (tPLH, tPHL = 200 ns MAX.)
• High common mode transient immunity (CMH, CML = ±50 kV/µs MIN.)
• Operating Ambient Temperature (125 ºC)
• Embossed tape product : PS9331L-E3, PS9331L2-E3: 2 000 pcs/reel
• Pb-Free product
APPLICATIONS
• IGBT, Power MOS FET Gate Driver
• Industrial inverter
• AC Servo
Page 1 of 12
1 page  
Preliminary document
Specifications in this document are tentative and subject to change.
PS9331L, PS9331L2
A Business Partner of Renesas Electronics Corporation.
Chapter Title
ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter
Symbol
Conditions
MIN. TYP.*1 MAX. Unit
Diode Forward Voltage
VF IF = 10 mA, TA = 25C
Reverse Current
IR VR = 3 V, TA = 25C
Input Capacitance
CIN f = 1 MHz, VF = 0 V
Detector High Level Output Current
IOH VO = (VCC 4 V) *2
VO = (VCC 15 V) *3
Low Level Output Current
IOL VO = (VEE + 2.5 V) *2
VO = (VEE + 15 V) *3
High Level Output Voltage VOH IF = 10 mA, IO = -100 mA *4
Low Level Output Voltage VOL IF = 0 mA, IO = 100 mA
High Level Supply Current ICCH IF = 10 mA, IO = 0 mA
Low Level Supply Current ICCL IF = 0 mA, IO = 0 mA
Coupled Threshold Input Current
(L H)
IFLH IO = 0 mA, VO > 5 V
1.35 1.56
30
0.5 2.0
2.0
0.5 2.0
2.0
VCC 3.0 VCC 1.3
0.1
1.2
1.2
1.8
1.75
10
0.5
2.0
2.0
5.0
V
A
pF
A
A
V
V
mA
mA
mA
Threshold Input Voltage
(H L)
VFHL IO = 0 mA, VO < 5 V
0.8
V
Notes: *1. Typical values at TA = 25C, VCC VEE = 30 V.
*2. Maximum pulse width = 50 s, Maximum duty cycle = 0.5%.
*3. Maximum pulse width = 10 s, Maximum duty cycle = 0.2%.
*4. VOH is measured with the DC load current in this testing.
SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
VEE = GND, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.*1
MAX.
Unit
Propagation Delay Time (L H) tPLH
Propagation Delay Time (H L) tPHL
Pulse Width Distortion (PWD) |tPHLtPLH|
Propagation Delay Time
tPHLtPLH
(Difference Between Any Two
Products)
Rg = 10 , Cg = 10 nF,
f = 10 kHz,
Duty Cycle = 50%*2,
IF = 10 mA
150 200
150 200
75
90 90
ns
ns
ns
ns
Rise Time
tr
Fall Time
tf
Common Mode Transient
Immunity at High Level Output
|CMH|
TA = 25C, IF = 10 mA,
VCC = 30 V, VCM = 1.5 kV
Common Mode Transient
Immunity at Low Level Output
|CML|
TA = 25C, IF = 0 mA,
VCC = 30 V, VCM = 1.5 kV
Notes: *1. Typical values at TA = 25C, VCCVEE = 30 V.
*2. This load condition is equivalent to the IGBT load at 1 200 V/75 A.
50
50
40
40
ns
ns
kV/s
kV/s
Page 5 of 12
5 Page 
Preliminary document
Specifications in this document are tentative and subject to change.
PS9331L, PS9331L2
NOTES ON HANDLING (UNIT: mm)
A Business Partner of Renesas Electronics Corporation.
Chapter Title
CAUTIONS REGARDING NOISE
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the output
transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 1.0 F is used between VCC and GND near device. Also, ensure that the distance
between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) When designing the printed wiring board, ensure that the pattern of the IGBT collectors/emitters is not too close
to the input block pattern of the photocoupler.
If the pattern is too close to the input block and coupling occurs, a sudden fluctuation in the voltage on the IGBT
output side might affect the photocoupler’s LED input, leading to malfunction or degradation of characteristics.
(If the pattern needs to be close to the input block, to prevent the LED from lighting during the off state due to
the abovementioned coupling, design the input-side circuit so that the bias of the LED is reversed, within the
range of the recommended operating conditions, and be sure to thoroughly evaluate operation.)
(3) Pin 2 (which is an NC*1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may
degrade the internal noise environment of the device.
Note: *1. NC: Non-Connection (No Connection).
3. Make sure the rise/fall time of the forward current is 0.5 s or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/s or less.
5. Avoid storage at a high temperature and high humidity.
Page 11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet PS9331L2.PDF ] | |
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