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PDF SKM900GA12E4 Data sheet ( Hoja de datos )
| Número de pieza | SKM900GA12E4 | |
| Descripción | IGBT4 Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
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SKM900GA12E4
SEMITRANS® 4
IGBT4 Modules
SKM900GA12E4
Target Data
Features
• IGBT4 = 4. Generation Medium Trench
IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated Gate resistor
• For switching frequenzies up to 12kHz
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
• Switched reluctance motor
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES
tpsc
Tj
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
IC = 900 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 32.8 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
IC = 900 A
VGE = ±15 V
RG on = 0.5
RG off = 0.5
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
di/dton = 9000 A/µs Tj = 150 °C
di/dtoff = 4500 A/µs Tj = 150 °C
Rth(j-c)
per IGBT
Values
1200
1305
1003
900
2700
-20 ... 20
10
-40 ... 175
871
651
800
2400
3520
-40 ... 175
500
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
1.83 2.08 V
2.23 2.44 V
0.8 0.9 V
0.7 0.8 V
1.14 1.31 m
1.70 1.82 m
5 5.8 6.5 V
0.1 0.3 mA
mA
54.4 nF
3.52 nF
3 nF
5100
nC
0.94
200 ns
100 ns
80 mJ
620 ns
110 ns
115 mJ
0.035 K/W
GA
© by SEMIKRON
Rev. 1 – 15.08.2012
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SKM900GA12E4.PDF ] | |
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