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PDF SKM50GB12V Data sheet ( Hoja de datos )
| Número de pieza | SKM50GB12V | |
| Descripción | IGBT Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
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SKM50GB12V
SEMITRANS® 2
SKM50GB12V
Target Data
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
tpsc
Tj
Tj = 175 °C
ICRM = 3xICnom
VCC = 720 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tc = 25 °C
Tc = 80 °C
Tj = 125 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
VGE = 15 V
Tj = 25 °C
Tj = 150 °C
VGE=VCE, IC = 2 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
Tj = 150 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VCC = 600 V
IC = 50 A
VGE = ±15 V
RG on = 13 Ω
RG off = 13 Ω
per IGBT
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Tj = 150 °C
Values
1200
79
60
50
150
-20 ... 20
10
-40 ... 175
65
49
50
150
270
-40 ... 175
200
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
6
typ.
1.85
2.2
0.94
0.88
18.2
26.4
6.5
0.1
3
0.30
0.295
540
4.0
5
4
max. Unit
2.3
2.65
1.25
1.22
21.0
28.6
7
0.3
0.53
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
GB
© by SEMIKRON
Rev. 0 – 23.12.2009
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SKM50GB12V.PDF ] | |
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