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PDF SSG4472N Data sheet ( Hoja de datos )
| Número de pieza | SSG4472N | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
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Elektronische Bauelemente
SSG4472N
5.1A, 200V, RDS(ON) 78mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13’ inch
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS 200
VGS ±20
Continuous Drain Current 1
TA = 25°C
TA = 70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
5.1
4.3
30
4.2
Total Power Dissipation 1
TA = 25°C
TA = 70°C
PD
3.1
2.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 ~ 150
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient 1
t ≦ 10 sec
Steady State
RθJA
40
80
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
05-Nov-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSG4472N.PDF ] | |
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