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PDF SMG2392N Data sheet ( Hoja de datos )
| Número de pieza | SMG2392N | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | SeCoS Halbleitertechnologie | |
| Logotipo |  |
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Elektronische Bauelemente
SMG2392N
0.6A, 150V, RDS(ON) 2.6Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper lead frame SC-59
saves board space.
Fast switching speed.
High performance trench technology.
Application
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
3
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipation 1
TA=25°C
TA=70°C
PD
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t ≦10sec
Steady State
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RθJA
http://www.SeCoSGmbH.com/
21-May-2013 Rev. A
Ratings
150
±20
0.6
0.4
10
1.7
1.3
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
W
W
°C
°C / W
Any changes of specification will not be informed individually.
Page 1 of 4
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2392N.PDF ] | |
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