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PDF SMK630D Data sheet ( Hoja de datos )
| Número de pieza | SMK630D | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage : BVDSS=200V(Min.)
Low Crss : Crss=24pF(Typ.)
Low gate charge : Qg=12nC(Typ.)
Low RDS(on) : RDS(on)=0.4Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK630D
SMK630
TO-252
Marking Diagram
SMK
630
YWW
Column 1,2 : Device Code
Column 3 : Production Information
e.g.) YWW
-. YWW : Date Code (year, week)
SMK630D
Advanced N-Ch Power MOSFET
D
G
S
TO-252
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
VDSS
Gate-source voltage
Drain current (DC) *
VGSS
(Tc=25℃)
ID (Tc=100℃)
Drain current (Pulsed) *
IDM
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
②
②
①
①
PD
IAS
EAS
IAR
EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
200
30
9
5.7
36
45
9
232
9
9.5
150
-55~150
Characteristic
Symbol
Thermal
resistance
Junction-case
Junction-ambient **
Rth(J-C)
Rth(J-A)
** When mounted on the minimum pad size recommended (PCB Mount)
Typ.
-
-
Max.
2.77
50
KSD-T6O014-002
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Unit
C/W
1
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
SMK630D
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T6O014-002
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK630D.PDF ] | |
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