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Número de pieza | 2N3501UB | |
Descripción | RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N3501UB (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! 2N3501UB
compliant
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
Qualified Levels:
JAN, JANTX, JANTXV
AND JANS
DESCRIPTION
This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for high-
reliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as
well as a low profile U4 surface mount. Microsemi also offers numerous other transistor
products to meet higher and lower power ratings with various switching speed requirements in
both through-hole and surface-mount packages.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of JEDEC registered 2N3501 number.
• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/366.
(See part nomenclature for all available options.)
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching.
• Low profile ceramic package.
• Lightweight.
• Military and other high-reliability applications.
MAXIMUM RATINGS @ TC = +25 ºC unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature Range
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Solder Pad
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25 °C (1)
@ TSP = +25 °C (2)
Symbol
TJ, Tstg
RӨJA
RӨJSP
VCEO
VCBO
VEBO
IC
PT
Value
-65 to +200
325
90
150
150
6.0
300
0.5
1.5
Notes: 1. See figure 1.
2. See figure 2.
Unit
°C
oC/W
oC/W
V
V
V
mA
W
UB Package
Also available in:
TO-5 package
(long-leaded)
2N3498L – 2N3501L
TO-39 (TO-205AD)
package
(leaded)
2N3498 – 2N3501
U4 package
(surface mount)
2N3498U4 – 2N3501U4
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0276-3, Rev. 1 (121564)
©2012 Microsemi Corporation
Page 1 of 7
1 page GRAPHS
2N3501UB
Tc (°C) (Case)
FIGURE 1
Derating for all devices (RθJSP) H
T4-LDS-0276-3, Rev. 1 (121564)
Tc (°C) (Case)
FIGURE 2
Derating for all devices (RθJA)
©2012 Microsemi Corporation
Page 5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 2N3501UB.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N3501UB | RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR | Microsemi Corporation |
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