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Número de pieza | BSC039N06NS | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BSC039N06NS (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC039N06NS
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
3.9 mW
100 A
32 nC
27 nC
PG-TDSON-8
Type
BSC039N06NS
Package
PG-TDSON-8
Marking
039N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
100 A
V GS=10 V, T C=100 °C
65
V GS=10 V, T C=25 °C,
R thJA =50K/W2)
19
Pulsed drain current3)
Avalanche energy, single pulse4)
I D,pulse
E AS
T C=25 °C
I D=50 A, R GS=25 W
400
50 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 x 40 x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.1
page 1
2012-12-07
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
360
320 10 V
280
240
7V
BSC039N06NS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
8
5 V 5.5 V
7
6V
7V
6
5
200 4
6V
160
3
120
5.5 V
2
80
5V 1
40
10 V
0
0.0
0.5 1.0 1.5
VDS [V]
2.0
0
0 50 100 150 200 250 300 350 400
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
360
320
280
80
240
200
160
40
120
80
40
0
0
150 °C
25 °C
246
VGS [V]
8
0
0 20 40 60 80 100
ID [A]
Rev.2.1
page 5
2012-12-07
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BSC039N06NS.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSC039N06NS | Power Transistor | Infineon Technologies AG |
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