(PDF) SPN2304W Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN2304W
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN2304W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2304W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES 30V/3.2A,RDS(ON)= 65mΩ@VGS=10V 30V/2.0A,RDS(ON)= 90mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2011/08/ 18 Ver.1 Page 1 1 page SPN2304W N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2011/08/ 18 Ver.1 Page 5 5 Page

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PDF SPN2304W Data sheet ( Hoja de datos )