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PDF EMA1002-50MA08GRR Data sheet ( Hoja de datos )
| Número de pieza | EMA1002-50MA08GRR | |
| Descripción | 1W Mono Audio Power Amplifier | |
| Fabricantes | Elite Semiconductor | |
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ESMT/EMP
EMA1002
1W Mono Audio Power Amplifier with Headphone Sense
General Description
The EMA1002 is an audio power amplifier primarily designed
for portable communication applications such as mobile
phones and portable multimedia players (PMP). To an 8Ω
BTL load, it can deliver 1 watt of continuous average power
with less than 1% distortion (THD+N) from a 5VDC supply.
The EMA1002 is pin-compatible to National Semi’s LM4890
with a superior (THD+N). It does not require output
coupling capacitors or bootstrap capacitors, and is ideal
for mobile phone and other low voltage applications where
minimal power consumption is a primary requirement.
The EMA1002 features a low-power consumption shutdown
mode, and an internal thermal shutdown protection
mechanism.
Advanced pop & click circuitry is built in to eliminate noises
that would otherwise occur during turn-on and turn-off
transitions. The EMA1001 is unity-gain stable and can be
configured by external gain-setting resistors.
Key Specifications
PSRR at 217Hz, VDD = 5V (Fig. 1) 60dB(typ.)
Power Output at 5.0V & 1% THD 1W(typ.)
Power Output at 2.6V & 1% THD 250mW(typ.)
Shutdown Current
0.1µA(typ.)
Features
Available in space-saving MSOP package
Ultra low current shutdown mode
BTL output driving capacitive loads
Improved pop & click circuitry eliminating noises
during turn-on and turn-off transitions
2.2 - 5.5V operation
No output coupling capacitors, snubber networks or
bootstrap capacitors required
Thermal shutdown protection
Unity-gain stable
External gain configuration capability
Headphone amplifier mode
Applications
Mobile Phones
PDAs and PMPs
Portable Electronic Device
Connection Diagram
MSOP Package
Order information
EMA1002-50MA08GRR/NRR
50 5.0V Operation
MA08 MSOP-8 Package
GRR RoHS (Pb Free)
Rating: -40 to 85°C
Package in Tape & Reel
NRR
RoHS & Halogen free (By Request)
Rating: -40 to 85°C
Package in Tape & Reel
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 4.0
1/16
1 page  
ESMT/EMP
EMA1002
Electrical Characteristics VDD = 2.6V (Notes 1, 2, 8)
The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for TA = 25°C.
Conditions
Units
Symbol Parameter
Conditions
Typical
(Note 6)
Limit
(Notes 7, 9)
(Limits)
IDD
ISD
VIH_SDNB
VIL_SDNB
VIH_HPSENSE
VIL_HPSENSE
VOS
PO
Quiescent Power Supply
Current
Shutdown Current
Shutdown Voltage Input High
Shutdown Voltage Input Low
Shutdown Voltage Input High
Shutdown Voltage Input Low
Output Offset Voltage
Output Power
VIN = 0V, HP SENSE=0V
VIN = 0V, HP SENSE=2.6V
VSHUTDOWN = 0V
THD = 1% (max); f = 1 kHz
8Ω Load, HP SENSE<1.3V
2.6
1.5
0.1
5
0.25
mA (max)
mA (max)
1.0 µA (max)
1.2 V (min)
0.4 V (max)
2.1 V (min)
1.3 V (max)
25 mV (max)
W
THD = 1% (max); f = 1 kHz
32Ω Load, HP SENSE>2.1V
20
mW
TWU
TSD
THD+N
PSRR
(Note 10)
TSDT
Wake-up time
Cbypass =1uF
Thermal Shutdown
Temperature
Total Harmonic Distortion + PO = 0.2 Wrms; f = 1kHz
Noise
Power Supply Rejection Ratio Vripple = 200mV sine p-p
Input Terminated with 10
ohms to ground
Shut Down Time
8 Ω load
100
160
0.03
55 (f =217Hz)
60 (f = 1kHz)
0.1
220 ms (max)
140 °C (min)
180 °C (max)
%
dB (min)
ms (max)
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings
indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical
Characteristics state DC and AC electrical specifications under particular test conditions, which guarantee specific
performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for
parameters where no limit is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the
ambient temperature TA. The maximum allowable power dissipation is PDMAX = (TJMAX–TA)/ θJA or the number given in
Absolute Maximum Ratings, whichever is lower. For the EMA1001, see power derating curves for additional information.
Note 4: Human body model, 100 pF discharged through a 1.5 kΩresistor.
Note 5: Machine Model, 220 pF–240 pF discharged through all pins.
Note 6: Typicals are measured at 25°C and represent the parametric norm.
Note 7: Limits are guaranteed to EMP’s AOQL (Average Outgoing Quality Level).
Note 8: Shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a
maximum of 2µA.
Note 9: Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Note 10: PSRR is a function of system gain. Specifications apply to the circuit in Figure 1 where AV = 2. Higher system gains will
reduce PSRR value by the amount of gain increase. A system gain of 10 represents a gain increase of 14dB. PSRR will be
reduced by 14dB and applies to all operating voltages.
External Components Description (Figure 1)
Components Functional Description
1. R2
Inverting input resistance for setting the closed-loop gain in conjunction with Rf. This resistor also
forms a high pass filter with C2 at fC= 1/(2π R2 C2).
2. C2
3. Rf
4. C1
Input coupling capacitor for blocking the DC voltage at the amplifier’s input terminals. Also
creates a high pass filter with C2 at fC= 1/(2π R2 C2). Refer to the section, Proper Selection of
External Components, for an explanation of how to determine the value of C2.
Feedback resistance for setting the closed-loop gain in conjunction with R2.
Supply bypass capacitor for providing power supply filtering. Refer to the section, Power Supply
Bypassing, for information concerning proper placement and selection of the supply bypass
5. C3
capacitor, C3.
Bypass pin capacitor for providing half-supply filtering. Refer to the section, Proper Selection of
External Components, for information concerning proper placement and selection of C3.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 4.0
5/16
5 Page 
ESMT/EMP
Reference Design Board and Layout
EMA1002
FIGURE 3. REFERENCE DESIGN
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : May. 2009
Revision : 4.0
11/16
11 Page | ||
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