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PDF SLM5868-25F Data sheet ( Hoja de datos )
| Número de pieza | SLM5868-25F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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SLM5868-25F
C-band Internally Matched FET
FEATURES
• High Output Power: P1dB=44.0dBm(Typ.)
• High Gain: G1dB=9.0dB(Typ.)
• High PAE: hadd=34%(Typ.)
• Broad Band: 5.85 to 6.75GHz
• Impedance Matched Zin/Zout = 50ohm
• Hermetically Sealed Package
DESCRIPTION
The SLM5868-25F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS
Ite m
Drain-Source Voltage (Tc=25deg.C)
Gate-Source Voltage (Tc=25deg.C)
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
Symbol
VDS
V GS
PT
Tstg
Tch
Rating
15
-5
93.7
-65 to +175
+175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION
Ite m
Sym bol
DC Input Voltage
VDS
Forw ard Gate Current
IGF
Reverse Gate Current
IGR
Storage Tem perature
Tstg
Channel Tem perature
Tch
Condition
RG=25 ohm
RG=25 ohm
Recom m end
10
+64.0
-11.2
-65 to +150
+155
Unit
V
mA
mA
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
M in.
Lim it
Typ.
M ax.
Unit
Drain Current
IDSS
VDS=5V , VGS=0V
- 10 15.0 A
Trans conductance
gm VDS=5V , IDS=6.5A
- 10 -
S
Pinch-off Voltage
Vp VDS=5V , IDS=500mA
-0.5 -1.5 -3.0
V
Gate-Source Breakdow n Voltage
V GSO
IGS=-500uA
-5.0 -
-
V
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
P1dB
G1dB
Idsr
hadd
DG
V DS=10V
f= 5.85 to 6.75 GHz
IDSDC=0.65IDSS (typ.)
Zs=ZL=50 ohm
43.0
8.0
-
-
-
44.0
9.0
6.5
34
-
-
-
7.6
-
1.6
dBm
dB
A
%
dB
3rd Order Interm odulation
Dis tor tion
f=6.75 GHz
IM3 Df=10MHz，2-tone Test -42 -45
Pout=33.0dBm (S.C.L.)
-
dBc
Therm al Resistance
Rth Channel to Case
- 1.4 1.6 deg.C/W
Channel Tem perature Rise
DTch
(10V x Idsr - Pout + Pin) x Rth
-
- 100 deg.C
CASE STYLE : IK
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD
Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
RoHS COMPLIANCE
Yes
Edition 1.0
Oct. 2012
1
1 page  
SLM5868-25F
C-band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.0
Oct. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SLM5868-25F.PDF ] | |
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