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PDF BSS84AKM Data sheet ( Hoja de datos )
| Número de pieza | BSS84AKM | |
| Descripción | 230 mA P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BSS84AKM
50 V, 230 mA P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -10 V; Tamb = 25 °C
Min Typ Max Unit
- - -50 V
-20 -
20 V
[1] - - -230 mA
VGS = -10 V; ID = -100 mA;
Tj = 25 °C
- 4.5 7.5 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
1 page  
NXP Semiconductors
BSS84AKM
50 V, 230 mA P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from junction to solder point
Min Typ Max Unit
[1] -
310 360 K/W
[2] -
150 175 K/W
- - 40 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
103 017aaa109
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
0.02
0 0.01
10
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa110
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0
0.02
0.01
10
10−3
10−2
10−1
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS84AKM
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
BSS84AKM
50 V, 230 mA P-channel Trench MOSFET
9. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
2
b
e
L
1
L1
3
b1
e1
A
A1
E
D
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
A1
max.
b
b1
D
E
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
e
0.35
e1
0.65
L
0.30
0.22
L1
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT883
SC-101
0
Fig 18. Package outline SOT883 (SOT883)
BSS84AKM
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
0.5
scale
1 mm
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
© NXP B.V. 2011. All rights reserved.
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BSS84AKM.PDF ] | |
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