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PDF AM4410N Data sheet ( Hoja de datos )
| Número de pieza | AM4410N | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM4410N (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
AM4410N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 13.5 @ VGS = 10V
20 @ VGS = 4.5V
ID (A)
13
11
18
27
36
45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
30 V
±20
±13
±11 A
±50
Continuous Source Current (Diode Conduction)a
IS 2.3 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
3.1
2.2
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
25
50
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM4410_F
1 page  
Analog Power
Package Information
SO-8: 8LEAD
AM4410N
H x 45°
PRELIMINARY
5 Publication Order Number:
DS-AM4410_F
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AM4410N.PDF ] | |
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