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PDF Si2306BDS Data sheet ( Hoja de datos )
| Número de pieza | Si2306BDS | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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平网-功率器件专业供应商 0755-83307717 www.ping-web.com [email protected] 谭小姐
N-Channel 30-V (D-S) MOSFET
Si2306BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.047 at VGS = 10 V
30
0.065 at VGS = 4.5 V
ID (A)
4.0
3.5
Qg (Typ.)
3.0
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2306BDS (L6 )*
* Marking Code
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
4.0 3.16
3.5 2.7
Pulsed Drain Current
IDM 20
Continuous Source Current (Diode Conduction)a, b
IS
1.04
0.62
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
1.25
0.8
0.75
0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symb
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on FR4 board, t ≤ 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
ol
RthJA
RthJF
Typical
80
130
60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
Maximum
100
166
75
Unit
°C/W
www.vishay.com
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Vishay
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Document Number: 91000
Revision: 11-Mar-11
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