PDF PTFB241402F Data sheet ( Hoja de datos )

Número de pieza	PTFB241402F
Descripción	High Power RF LDMOS Field Effect Transistor
Fabricantes	Infineon Technologies
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No Preview Available ! PTFB241402F High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band. Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability. PTFB241402F Package H-37248-4 CW Performance, Single Side VDD = 30 V, IDQ = 660 mA 17.4 60 17.2 55 17.0 50 16.8 Gain 16.6 45 40 16.4 35 16.2 16.0 2320 MHz 2350 MHz 15.8 Efficiency 2380 MHz 30 25 20 15.6 15 40 41 42 43 44 45 46 47 48 49 Output Power (dBm) Features • Broadband internal matching • Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty amplifiers • Integrated ESD protection • Excellent thermal stability • Capable of handling 10:1 VSWR @ 30 V, 70 W (CW) output power • Pb-free and RoHS compliant RF Characteristics Two-tone Measurements (tested in Infineon test fixture, combined outputs) VDD = 30 V, IDQ = 1200 mA, POUT = 110 W PEP, ƒ = 2370 MHz, tone spacing = 1 MHz Characteristic Symbol Min Gain Drain Efficiency Gps hD 16.5 34.5 Intermodulation Distortion IMD — Typ 17 37 –32 Max — — –30 Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 13 Rev. 04.1, 2016-06-15 1 page ar. 2, 2010 6:25:12 PM 1402ef-v1 50 Ohms Broadband Circuit Impedance PTFB241402F Z Source G G D Z Load S D Frequency MHz 2320 2350 2380 Z Source W R jX 27.0 –16.0 25.0 –8.8 27.5 –5.7 Z Load W R jX 3.0 –4.1 3.0 –4.5 2.8 –4.5 Z0 = 50 Ω 2380 MHz 0.1 Z Load 2320 MHz 0. 2 Z Source 2380 MHz 2320 MHz 0.3 0.4 Data Sheet 5 of 13 Rev. 04.1, 2016-06-15 5 Page PTFB241402F Reference Circuit (cont.) Components Information Component Description Input C801, C802 Capacitor, 10 µF C803, C804, C805 Capacitor, 1000 pF C806, C808 Chip capacitor, 1.2 pF C807 Chip capacitor, 16 pF L801, L802 Inductor, 22 nH R801 R802 Resistor, 1200 W Resistor, 2000 W R803, R809 R804 R805, R807 R806, R808 S1 Resistor, 10 W Resistor, 1300 W Resistor, 3000 W Resistor, 10 W Voltage Regulator S2, S3 S4, S5 Potentiometer, 2k W EMI filter, 2 - 4 A, 0.1 - 2.2 µF S6 Transistor Output C901, C902, C904 C903, C907 C905, C906 C908, C909 S1, S2 Chip capacitor, 7.5 pF Capacitor, 100 µF Chip capacitor, 2.4 pF Capacitor, 10 µF EMI filter, 6 A, 1.5 µF Pinout Diagram Suggested Manufacturer P/N Digi-Key Digi-Key ATC ATC Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key National Semiconductor Digi-Key Murata Infineon Technologies 490-3905-6-ND PCC1772CT-ND ATC100A1R2BW150XB ATC100A160FW150XB TKS2349CT-ND P1.2KGCT-ND P2.0KECT-ND P10ECT-ND P1.3KGCT-ND P3.0KECT-ND P10GCT-ND LM7805 3224W-202ECT-ND NFM18P BCP56 ATC Digi-Key ATC Digi-Key Murata ATC100B7R5BW500XB PCE3718CT-ND ATC100A2R4BW150XB 490-1891-2-ND NFM55P Lead connections for PTFB241402F Gate G1 Gate G2 Drain D1 Drain D2 H -3724-84_pd_03- 23-2010 Source (flange) Data Sheet 11 of 13 Rev. 04.1, 2016-06-15 11 Page

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