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PDF SVD4N60FG Data sheet ( Hoja de datos )
| Número de pieza | SVD4N60FG | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Silan | |
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Hay una vista previa y un enlace de descarga de SVD4N60FG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SVD4N60D/F(G)/T_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD4N60D/F(G)/T is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD4N60T
SVD4N60F
SVD4N60FG
SVD4N60D
SVD4N60DTR
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVD4N60T
SVD4N60F
SVD4N60FG
SVD4N60D
SVD4N60D
Material
Pb free
Pb free
Halogen free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MI CROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.12.13
Page 1 of 9
http://www.Datasheet4U.com
1 page  
SVD4N60D/F(G)/T_Datasheet
TYPICAL CHARACTERISTICS (continued)
HANGZHOU SILAN MI CROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.3
2010.12.13
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SVD4N60FG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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