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PDF IRFH5255PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFH5255PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
25 V
6.0 mΩ
7.0 nC
0.6 Ω
51 A
Applications
• Control MOSFET for high Frequency Buck Converters
IRFH5255PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Features
Low Charge (typical 7nC)
Low Rg (typical 0.6Ω)
Low Thermal Resistance to PCB (<4.9°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5255TRPbF
IRFH5255TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25 °C
ID @ TC(Bottom) = 10 0°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
25
± 20
15
12
51
33
60
3.6
26
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes through
are on page 8
1 www.irf.com © 2013 International Rectifier
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December 16, 2013
http://www.Datasheet4U.com
1 page  
IRFH5255PbF
20
ID = 15A
15
10
TJ = 125°C
5
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
225
200 ID
TOP 4.13A
175 8.40A
BOTTOM 15A
150
125
100
75
50
25
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2013 International Rectifier
Submit Datasheet Feedback
December 16, 2013
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFH5255PbF.PDF ] | |
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