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PDF TPD1036F Data sheet ( Hoja de datos )

Número de pieza TPD1036F
Descripción 2-IN-1 Low-Side Power Switch
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TPD1036F Hoja de datos, Descripción, Manual

TPD1036F
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
TPD1036F
2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drivers
The TPD1036F is a 2-IN-1 low-side switch.
The output has a vertical MOSFET, and the input can be directly
driven from CMOS or TTL logic (e.g., an MPU). The IC provides
intelligent protection functions.
Features
Two built-in power IC chips with a structure that incorporates
a control block and a vertical power MOSFET on each chip.
Can be directly driven from a microprocessor, a CMOS logic
IC, etc.
Weight: 0.08 g (typ.)
Overvoltage (active clamp), overtemperature (thermal
shutdown), and overcurrent (current limiter) protections are built in.
Low ON-resistance: RDS (ON) = 0.5 Ω (max) (@VIN = 5 V, ID = 0.7 A, Tch = 25°C)
Low drain cut-off current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
Low input current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40 to 110°C)
Housed in the 8-pin SOP package and supplied in embossed carrier tape.
Pin Assignment (top view)
Marking
SOURCE1 1
IN1 2
SOURCE2 3
IN2 4
8 DRAIN1
7 DRAIN1
6 DRAIN2
5 DRAIN2
TPD1036
F
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb) -Free Finish
Note: This product has a MOS structure and is sensitive to electrostatic discharge.
1 2008-09-12
http://www.Datasheet4U.com

1 page




TPD1036F pdf
TPD1036F
Electrical Characteristics
Characteristics S
Drain-source clamp voltage
Input threshold voltage
Protective circuit operation
input voltage range
Drain cut-off current
Input current
Drain-source ON-resistance
Overtemperature detection
Overcurrent detection
Switching times
Drain-source diode forward
voltage
ymbol
V (CL) DSS
Vth
VIN (opr)
IDSS
IIN (1)
IIN (2)
RDS (ON)
TS
IS 2
tON
tOFF
VDSF
Test
Circuit
Test Condition
Tch = -40 to 110VIN = 0 V, ID=1mA 40
Tch = 251.0
VDS = 13 V, ID = 10mA
Tch = -40 to 110
Tch = 25
Tch = -40 to 110
3
3.5
Tch = 25
VIN = 0 V, VDS = 30V
Tch = -40 to 110
Tch = -40 to 110
VIN = 5 V, at normal
operation
VIN = 5 V, when
Tch = -40 to 110overcurrent protective
circuit is actuated
Tch = 25
VIN = 5 V, ID = 0.7 A
Tch = -40 to 110
⎯ ⎯ VIN = 5 V
Tch = 251.5
Tch = -40 to 110
VIN = 5 V
Tch = 25
1
Tch = -40 to 110
VDD = 13 V,
VIN = 0 V/5 V,
Tch = 25
ID = 0.7 A
Tch = -40 to 110
Tch = 25
VIN = 0 V, IF = 1.5 A
Min Typ. Max
60
2.8
0.9 3.0
6
6
⎯ ⎯ 10
⎯ ⎯ 100
⎯ ⎯ 300
⎯ ⎯ 350
0.3
0.5
⎯ ⎯ 0.75
150 160
2.5
1 ⎯⎯
⎯ ⎯ 30
⎯ ⎯ 60
⎯ ⎯ 60
⎯ ⎯ 90
⎯ ⎯ 1.7
Unit
V
V
V
μA
μA
Ω
°C
A
μs
V
Test Circuit 1
Switching times measuring circuit
Test Circuit
Measured Waveforms
TPD1036F
IN
P.G.
DRAIN SOURCE ID = 0.7 A
V VDD = 13 V
VIN Waveform
VDS Waveform
90%
10%
90%
10%
5V
0V
13 V
Test Circuit 2
Overcurrent detection measuring circuit
tON tOFF
Test Circuit
TPD1036F
IN DRAIN SOURCE
VIN = 5 V
V
ID
RL
VDD
RL decrease
RL
ID
0A
IS
5 2008-09-12

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