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Número de pieza | Si4384DY | |
Descripción | N-Channel Reduced Qg / Fast Switching MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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No Preview Available ! Si4384DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0085 at VGS = 10 V
0.0125 at VGS = 4.5 V
ID (A)
15
12
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information:Si4384DY-T1-E3 (Lead (Pb)-free)
Si4384DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Gen II Power MOSFETs
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS
• High-Side DC/DC Conversion
- Notebook
- Desktop
- Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
15
12
10
8
Pulsed Drain Current
IDM ± 50
Continuous Source Current (Diode Conduction)a
IS 2.8 1.3
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
25
31
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.1 1.47
20 .95
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symb
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Document Number: 72645
S09-0226-Rev. C, 09-Feb09
ol
RthJA
RthJF
Typical
34
71
17
Maximum
40
85
20
Unit
°C/W
www.vishay.com
1
http://www.Datasheet4U.com
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Si4384DY
Vishay Siliconix
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintain s worldwide manu facturing capa bility. Products may b e manu factured at on e of severa l qua lified lo cations. Reliability d ata f or S ilicon
Technology and Pa ckage Reliability rep resent a co mposite of all qu alified locat ions. For rela ted documents such as package/ tape drawings, p art ma rking, and
reliability data, see www.vishay.com/ppg?72645.
Document Number: 72645
S09-0226-Rev. C, 09-Feb09
www.vishay.com
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet Si4384DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
Si4384DY | N-Channel Reduced Qg / Fast Switching MOSFET | Vishay Siliconix |
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