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PDF APM2510NU Data sheet ( Hoja de datos )

Número de pieza APM2510NU
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes ANPEC 
Logotipo ANPEC Logotipo



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APM2510NU
N-Channel Enhancement Mode MOSFET
Features
Pin Description
25V/50A,
RDS(ON)=8.5m(typ.) @ VGS=10V
RDS(ON)=15m(typ.) @ VGS=4.5V
Super High Dense Cell Design
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management in Desktop Computer or
DC/DC Converters
GD
S
Top View of TO-252
D
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2510N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252
Operating Junction Temperature Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM2510N U :
APM2510N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Jul., 2008
1
www.anpec.com.tw
http://www.Datasheet4U.com

1 page




APM2510NU pdf
APM2510NU
Typical Characteristics (Cont.)
Output Characteristics
100
V =7,8,9,10V
GS
90
6V
80
70
60 5V
50
40
30 4V
20
10 3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
40
I =30A
D
35
30
25
20
15
10
5
0
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Drain-Source On Resistance
28
24
V =4.5V
20 GS
16
12
V =10V
GS
8
4
0
0 20 40 60 80 100
ID - Drain Current (A)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Jul., 2008
5
www.anpec.com.tw

5 Page





APM2510NU arduino
APM2510NU
Classification Reflow Profiles (Con.)
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
Package Thickness
Volume mm3
<350
<2.5 mm
2.5 mm
240 +0/-5°C
225 +0/-5°C
Volume mm3
350
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm3
Volume mm3
Volume mm3
<350
350-2000
>2000
<1.6 mm
1.6 mm – 2.5 mm
260 +0°C*
260 +0°C*
260 +0°C*
250 +0°C*
260 +0°C*
245 +0°C*
2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu,Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright © ANPEC Electronics Corp.
Rev. A.2 - Jul., 2008
11
www.anpec.com.tw

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