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PDF AP4503AGM-HF-3 Data sheet ( Hoja de datos )
| Número de pieza | AP4503AGM-HF-3 | |
| Descripción | Complementary N and P-channel Enhancement-mode Power MOSFETs | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4503AGM-HF-3
Complementary N and P-channel
Enhancement-mode Power MOSFETs
Simple Drive Requirement
Low On-resistance
Fast Switching Performance
RoHS-compliant, halogen-free
Description
D2
D2
D1
D1
SO-8
N-CH
G2
S2
G1
S1
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
28mΩ
6.9A
-30V
36mΩ
-6.3A
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP4503AGM-HF-3 is in a standard SO-8 package, which is widely
used for commercial and industrial surface-mount applications, and is
well suited for applications such as DC and servo motor drives.
G1
D1
G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID at TA=25°C
ID at TA=70°C
IDM
PD at TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
N-channel P-channel
30 -30
±20 ±20
6.9 -6.3
5.5 -5.0
20 -20
2.0
0.016
-55 to 150
-55 to 150
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP4503AGM-HF-3TR : in RoHS-compliant, halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201011252-3 1/8
http://www.Datasheet4U.com
1 page  
Advanced Power
Electronics Corp.
AP4503AGM-HF-3
Typical N-channel Electrical Characteristics (cont.)
f=1.0MHz
12 1000
C10 iss
8
I D =6 A
V DS =2 4 V
6
4
100
C oss
C rss
2
0
0369
12 15 18
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.01
0.0001
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP4503AGM-HF-3.PDF ] | |
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