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PDF MTP3LP01Y3 Data sheet ( Hoja de datos )
| Número de pieza | MTP3LP01Y3 | |
| Descripción | 30V P-CHANNEL Enhancement Mode MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : 794Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 1/ 8
30V P-CHANNEL Enhancement Mode MOSFET
MTP3LP01Y3
Features
• Ultra high speed switching.
• Low gate charge.
• 2.5V drive.
• Pb-free package lead plating and halogen-free package.
BVDSS
ID
RDSON(typ)
-30V
-230mA
3Ω@-4V
4.6Ω@-2.5V
10.9Ω@-1.5V
Equivalent Circuit
MTP3LP01Y3
Outline
SOT-723
D
G：Gate
S：Source
D：Drain
GS
Absolute Maximum Ratings (Ta=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation (Note 2)
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
Rth,ja
Tj, Tstg
Note : 1. Pulse width≤ 10μs, duty cycle≤1%.
2. When mounted on a glass epoxy with a dimension of 100mm²×1mm.
Limits
-30
±10
-230
-920
150
833
-55~+150
Unit
V
V
mA
mA
mW
°C/W
°C
MTP3LP01Y3
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : 794Y3
Issued Date : 2011.12.22
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
Static Drain-Source On-resistance vs Ambient Temperature
6
5
4
3
2
1
0
-100
160
140
120
100
80
60
40
20
0
0
ID=100mA,
VGS=4V
-50 0 50 100 150
Ambient Temperature-Ta(°C)
Power Derating Curve
200
50 100 150
Ambient Temperature---TA(℃)
200
Gate Charge Characteristics
10
9
VDS=10V,
8 ID=100mA
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Total Gate Charge---Qg(nC)
MTP3LP01Y3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTP3LP01Y3.PDF ] | |
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