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PDF MTP3LP01S3 Data sheet ( Hoja de datos )
| Número de pieza | MTP3LP01S3 | |
| Descripción | 30V P-CHANNEL Enhancement Mode MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTP3LP01S3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 1/ 9
30V P-CHANNEL Enhancement Mode MOSFET
MTP3LP01S3
Features
• Ultra high speed switching.
• Low gate charge.
• 2.5V drive.
• Pb-free package.
BVDSS
ID
RDSON(typ)
-30V
-230mA
3Ω@-4V
4.6Ω@-2.5V
10.9Ω@-1.5V
Equivalent Circuit
MTP3LP01S3
Outline
SOT-323
D
G：Gate
S：Source
D：Drain
GS
Ordering Information
Device
MTP3LP01S3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTP3LP01S3
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : 794N3
Issued Date : 2011.03.14
Revised Date : 2013.09.09
Page No. : 5/ 9
Typical Characteristics(Cont.)
Static Drain-Source On-resistance vs Ambient Temperature
6
5
4
3
2
1
0
-100
ID=100mA,
VGS=4V
-50 0 50 100 150
Ambient Temperature-Ta(°C)
200
Power Derating Curves
250
200
150
100
50
0
0 50 100 150 200
Ambient Temperature---TA(℃)
Gate Charge Characteristics
10
9
VDS=10V,
8 ID=100mA
7
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Total Gate Charge---Qg(nC)
10
1
0.1
0.01
0.001
0.0001
0.001
Maximum Safe Operating Area
Single pulse
Tc=25°C; Tj=150°C
implemented on a
glass epoxy
PW<100μs
1ms
10ms
100ms
DC
0.01 0.1 1 10
Drain-Source Voltage -VDS(V)
100
MTP3LP01S3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTP3LP01S3.PDF ] | |
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