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PDF MMBZ5246ELT1G Data sheet ( Hoja de datos )
| Número de pieza | MMBZ5246ELT1G | |
| Descripción | Zener Voltage Regulators | |
| Fabricantes | ON Semiconductor　 | |
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MMBZ52xxELT1G Series,
SZMMBZ52xxELT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is of fered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
• 225 mW Rating on FR−4 or FR−5 Board
• Zener Voltage Range − 2.4 V to 91 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
• AEC−Q101 Qualified and PPAP Capable
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• Pb−Free Packages are Available
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
Ppk
PD
225 W
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
RqJA
TJ, Tstg
417
−65 to
+150
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 7
1
http://onsemi.com
3
Cathode
1
Anode
MARKING
DIAGRAM
3
SOT−23
CASE 318
Bxx M G
1
STYLE 8
G
21
Bxx = Device Code
xx = (Refer to page 2)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ€
MMBZ52xxELT1G
SOT−23 3000 / Tape &
(Pb−Free)
Reel
SZMMBZ52xxELT1G SOT−23 3000 / Tape &
(Pb−Free)
Reel
MMBZ52xxELT3G
SOT−23 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Publication Order Number:
MMBZ5221ELT1/D
http://www.Datasheet4U.com
1 page  
MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
100
TA = 25°C
1000
100
10
1
BIAS AT
50% OF VZ NOM
10
1
1 10
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 5. Typical Capacitance
0.1
0.01
0.00
1
0.0001
0.00001
100 0
+150°C
+ 25°C
- 55°C
10 20 30 40 50 60 70 80
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 6. Typical Leakage Current
90
100 100
TA = 25°C
TA = 25°C
10 10
11
0.1 0.1
0.01 0
24
6 8 10
VZ, ZENER VOLTAGE (V)
12 0.0110
30 50 70
VZ, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
100
90 tr
80
70
60
50
40
30
20
10
00
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
tP
20 40
60
t, TIME (ms)
Figure 9. 8 × 20 ms Pulse Waveform
80
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