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PDF NVTFS4824N Data sheet ( Hoja de datos )
| Número de pieza | NVTFS4824N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NVTFS4824N
Power MOSFET
30 V, 4.7 mW, 46 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS4824NWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) J−mb (Notes 1,
Power Dissipation
RYJ−mb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
& 4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
30
"20
46
33
21
11
18.2
12.8
3.2
1.6
402
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 21 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 38 A, L = 0.1 mH, RG = 25 W)
EAS 72 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2 and 3)
RYJ−mb
7.2 °C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi ( Y) is us ed as required per JESD51 −12 for packages in whic h
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.7 mW @ 10 V
7.5 mW @ 4.5 V
ID MAX
46 A
N−Channel
D (5 − 8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1, 2, 3)
MARKING DIAGRAM
1
S
S XXXX
S AYWWG
GG
D
D
D
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
NVTFS4824N/D
http://www.Datasheet4U.com
1 page  
10
Duty Cycle = 0.5
0.2
1 0.1
0.05
0.02
0.1 0.01
Single Pulse
0.01
0.000001
0.00001
NVTFS4824N
TYPICAL CHARACTERISTICS
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
0.1
1
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVTFS4824NTAG
4824
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4824NWFTAG
24WF
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4824NTWG
4824
WDFN8
(Pb−Free)
5000 / Tape & Reel
NVTFS4824NWFTWG
24WF
WDFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NVTFS4824N.PDF ] | |
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