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PDF FSQ510MX Data sheet ( Hoja de datos )
| Número de pieza | FSQ510MX | |
| Descripción | Green Mode Power Switch | |
| Fabricantes | Fairchild Semiconductor | |
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Hay una vista previa y un enlace de descarga de FSQ510MX (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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January 2014
FSQ510 / FSQ510MX
Green Mode Fairchild Power Switch (FPS™)
for Valley Switching Converter – Low EMI and High Efficiency
Features
Uses an LDMOS Integrated Power Switch
Optimized for Valley Switching Converter (VSC)
Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
High Efficiency through Minimum Drain Voltage
Switching
Extended Valley Switching for Wide Load Ranges
Small Frequency Variation for Wide Load Ranges
Advanced Burst-Mode Operation for Low Standby
Power Consumption
Pulse-by-Pulse Current Limit
Protection Functions: Overload Protection (OLP),
Internal Thermal Shutdown (TSD) with Hysteresis
Under-Voltage Lockout (UVLO) with Hysteresis
Internal Startup Circuit
Internal High-Voltage SenseFET: 700 V
Built-in Soft-Start: 5 ms
Applications
Auxiliary P ower S upplies for LCD TV, LCD Monitor,
Personal Computer, and White Goods
Description
A Valley Switching Converter ( VSC) generally s hows
lower EMI and higher power conversion efficiency than
a conventional hard-switched converter with a fixed
switching frequency. The FSQ510 is an i ntegrated
Valley Switching Pulse Width Modulation (VS-PWM)
controller and SenseFET specifically designed for
offline Switch-Mode Power Supplies (SMPS) for valley
switching with m inimal ex ternal c omponents. T he VS-
PWM controller includes an integrated oscillator, under-
voltage lockout (UVLO), leading-edge blanking (LEB),
optimized gate dr iver, i nternal s oft-start, t emperature-
compensated precise c urrent s ources f or l oop
compensation, and self-protection circuitry.
Compared w ith di screte M OSFET and P WM c ontroller
solutions, th e FS Q510 can reduce total cost,
component count, size and weight; while simultaneously
increasing efficiency, productivity, and system reliability.
This device provides a platform for cost-effective designs
of a valley switching flyback converters.
Ordering Information
Part
Number
Package
Output Power Table(1)
Operating
Junction
Temperature
Current
Limit
RDS(ON) 230 VAC ± 15%(2)
(Max.)
Adapter(3)
Open
Frame(4)
85-265 VAC
Adapter(3)
Open
Frame(4)
FSQ510 7-DIP
-40 to +130°C 320 mA 32 Ω 5.5 W
9W
4W
6W
FSQ510MX 7-MLSOP
Packing
Method
Rail
Tape &
Reel
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Notes:
1. The junction temperature can limit the maximum output power.
2. 230 VAC or 100/115 VAC with voltage doubler.
3. Typical continuous power with a Fairchild charger evaluation board described in this datasheet in a non-
ventilated, enclosed adapter housing, measured at 50°C ambient temperature.
4. Maximum practical continuous power for auxiliary power supplies in an open-frame design at50°C ambient temperature.
© 2009 Fairchild Semiconductor Corporation
FSQ510 / FSQ510MX • Rev. 1.4.0
www.fairchildsemi.com
http://www.Datasheet4U.com
1 page  
Electrical Characteristics
TJ=25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min.
SenseFET Section
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
VCC=0 V, ID=100 µA
VDS=700 V
RDS(ON) Drain-Source On-State Resistance
CISS
COSS
tr
tf
Input Capacitance(9)
Output Capacitance(9)
Rise Time(9)
Fall Time(9)
Control Section
TJ=25°C, ID=180 mA
TJ=100°C, ID=180 mA
VGS=11 V
VDS=40 V
VDS=350 V, ID=25 mA
VDS=350 V, lD=25 mA
fS Initial Switching Frequency
∆fS Switching Frequency Variation(9)
IFB Feedback Source Current
tB Switching Blanking Time
tW Valley Detection Window Time(9)
DMAX Maximum Duty Ratio
DMIN
Minimum Duty Ratio
VSTART
VSTOP
UVLO Threshold Voltage
tS/S Internal Soft-Start Time
Burst-Mode Section
VBURH
VBURL Burst-Mode Voltage
HYS
VCC=11 V, VFB=5 V, Vsync=0 V
-25°C < TJ < 125°C
VCC=11 V, VFB=0 V
VCC=11 V, VFB=1 V,
Vsync Frequency Sweep
VCC=11 V, VFB=3 V
VCC=11 V, VFB=0 V
VFB=0 V, VCC Sweep
After Turn-on, VFB=0 V
VSTR=40 V, VCC Sweep
VCC=11 V, VFB Sweep
Protection Section
ILIM Peak Current Limit
VSD Shutdown Feedback Voltage
di/dt=90 mA/µs
VDS=40 V, VCC=11 V,
VFB Sweep
IDELAY Shutdown Delay Current
VCC=11 V, VFB=5 V
tLEB
TSD
HYS
Leading-Edge Blanking Time(9)
Thermal Shutdown Temperature(9)
Synchronous Section
VSH Synchronous Threshold Voltage
VSL
tSync Synchronous Delay Time
Total Device Section
VCC=11 V, VFB=1 V
VCC=11 V, VFB=1 V
IOP
Operating Supply Current
(Control Part Only)
VCC=11 V, VFB=5.5 V
ICH Startup Charging Current
VCC=VFB=0 V,VSTR=40 V
VSTR
Supply Voltage
VCC=VFB=0 V, VSTR Sweep
Note:
9. These parameters, although guaranteed, are not 100% tested in production.
700
87.7
200
7.2
54
8.0
6.0
3
0.75
0.65
280
4.2
3.5
130
0.55
0.05
180
Typ.
28
42
96
28
100
50
94.3
±5
225
7.6
3.0
60
8.7
6.7
5
0.85
0.75
100
320
4.7
4.5
360
140
60
0.70
0.10
200
0.8
1.0
27
Max.
150
32
48
100.0
±8
250
8.2
66
0
9.4
7.4
7
0.95
0.85
360
5.2
5.5
150
0.85
0.15
220
1.0
1.2
Unit
V
µA
Ω
Ω
pF
pF
ns
ns
kHz
%
µA
µs
µs
%
%
V
V
ms
V
V
mV
mA
V
µA
ns
°C
°C
V
V
ns
mA
mA
V
© 2009 Fairchild Semiconductor Corporation
FSQ510 / FSQ510MX • Rev. 1.4.0
5
www.fairchildsemi.com
5 Page 
Vo
Voset
VFB
0.85V
0.75V
Ids
Vds
Switching
disabled
t1
t2 t3
Switching
disabled
t4
time
Figure 18. Burst-Mode Operation
7. Advanced Valley Switching Operation: To
minimize s witching l oss and E lectromagnetic
Interference (EMI), the MOSFET t urns on w hen t he
drain v oltage r eaches i ts m inimum value in VS
converters. Due to the Discontinuous Conduction Mode
(DCM) operation, the feedback voltage is not changed,
despite the DC link voltage ripples, if the load condition
is not c hanged. S ince t he s lope of t he drain current is
changed depending on the DC link voltage, the turn-on
duration of MOSFET is variable with the DC link voltage
ripples. The s witching per iod i s c hanged c ontinuously
with the DC link voltage ripples. Not onl y t he s witching
at the instant of the minimum drain voltage, but also the
continuous change of t he s witching per iod, reduces
EMI. VS converters inherently scatter the EMI spectrum.
Typical products for VSC turn the MOSFET on when the
first valley is detected. In this case, the range of the
switching frequency is very wide as a r esult of the load
variations. A t a very light-load, for example, the
switching frequency can be as high as several hundred
kHz. S ome pr oducts fo r VSC, such as F airchild’s
FSCQ-series, define t he t urn-on i nstant of SenseFET
change at the first valley into at the second valley, when
the load condition decreases under i ts pr edetermined
level. T he r ange of s witching frequency narrows
somewhat. F or det ails, c onsult an FSCQ-series
datasheet, such as:
http://www.fairchildsemi.com/pf/FS/FSCQ1265RT.html
The r ange of t he s witching f requency c an be limited
tightly in FSQ-series. Because a k ind of bl anking t ime
(tB) is adopted, as shown in Figure 19, the s witching
frequency has minimum and maximum values.
Once the SenseFET is enabled, the next start is
prohibited during t he bl anking t ime (tB). A fter th e
blanking t ime, t he c ontroller f inds t he f irst valley within
the dur ation of t he valley detection w indow t ime ( tW)
(case A , B , and C ). I f no v alley i s f ound i n t W, th e
internal SenseFET is forced to turn on at the end of tW
(case D ). T herefore, FSQ510 has minimum switching
frequency of 94.3 kHz and m aximum s witching
frequency of 132 kHz, typically, as shown in Figure 20.
Tsmax=10.6 µs
Ids
tB=7.6 µs
Ts_A
IDS
A
IDS
tB=7.6 µs
Ts_B
IDS
B
IDS
tB=7.6µ s
Ts_C
IDS
C
IDS IDS
tB=7.6µ s
D
tW=3µs
Tsmax=10.6 µs
Figure 19. Advanced VS Operation
132 kHz
104 kHz
94.3kHz
When the resonant period is 2µs
A BC
Con stant
frequ ency
D
Bur st
mode
Po
Figure 20. Switching Frequency Range of the
Advanced Valley Switching
© 2009 Fairchild Semiconductor Corporation
FSQ510 / FSQ510MX • Rev. 1.4.0
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet FSQ510MX.PDF ] | |
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