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PDF SIA446DJ Data sheet ( Hoja de datos )
| Número de pieza | SIA446DJ | |
| Descripción | N-Channel 150 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiA446DJ
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
150
RDS(on) () MAX.
0.177 at VGS = 10 V
0.185 at VGS = 7.5 V
0.250 at VGS = 6 V
ID (A) a
7.7
7.6
4
PowerPAK® SC-70-6L Single
D
D6
S5
4
Qg (TYP.)
4.3 nC
S
1 2.05 mm
Top View
Marking Code: AV
2
3D
G
Bottom View
1
D
Ordering Information:
SiA446DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• ThunderFET® technology optimizes balance
of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters / boost converters
• Synchronous rectification
• Power management
• LED backlighting
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER S
YMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
LIMIT
150
± 20
7.7
6.2
3.3 b, c
2.6 b, c
10
12
2.9 b, c
7
2.5
19
12
3.5 b, c
2.2 b, c
-55 to 150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER SYMB
OL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36
°C/W
6.5
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The Po werPAK S C-70 is a l eadless package. T he e nd of the l ead te rminal i s expo sed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S14-0208-Rev. B, 10-Feb-14
1
Document Number: 62925
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
8
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
20
15
10
5
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
SiA446DJ
Vishay Siliconix
* The power dissipation PD is based on T J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in set tling the upper
dissipation lim it f or ca ses wher e addi tional he atsinking i s use d. It is used to determine the cu rrent rating, when this rating falls belo w the
package limit.
S14-0208-Rev. B, 10-Feb-14
5
Document Number: 62925
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SIA446DJ.PDF ] | |
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