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PDF MMBT3904 Data sheet ( Hoja de datos )

Número de pieza MMBT3904
Descripción NPN Silicon Switching Transistors
Fabricantes Infineon Technologies AG 
Logotipo Infineon Technologies AG Logotipo



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No Preview Available ! MMBT3904 Hoja de datos, Descripción, Manual

NPN Silicon Switching Transistors
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
Complementary types: SMBT3906... MMBT3906
SMBT3904S: For orientation in reel
see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBT3904...MMBT3904
Type
SMBT3904/MMBT3904
SMBT3904S
Marking
Pin Configuration
Package
s1A 1=B 2=E 3=C - - - SOT23
s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS 71°C, SOT23, SMBT3904
TS 115°C, SOT363, SMBT3904S
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
SMBT3904/MMBT3904
SMBT3904S
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
40
60
6
200
330
250
150
-65 ... 150
Value
240
140
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mV
°C
Unit
K/W
1 2012-08-21
http://www.Datasheet4U.com

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MMBT3904 pdf
DC current gain hFE = ƒ(IC)
VCE = 1 V, normalized
10 3
125 °C
25 °C
10 2
-55 °C
SMBT3904...MMBT3904
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
2
mA
Ι C 10 2
5
10 1
5
V CE
EHP00756
V BE
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 mA10 0
IC
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 0
0
0.2 0.4 0.6 0.8 1.0 V 1.2
VBE sat , VCE sat
Total power dissipation Ptot = ƒ(TS)
SMBT3904/MMBT3904
9
pF
7
6
5
4
3
2
1
00
CEB
CCB
4
8
12
16 A
22
VCB(VEB
360
mW
300
270
240
210
180
150
120
90
60
30
00 15 30 45 60 75 90 105 120 °C 150
TS
5 2012-08-21

5 Page





MMBT3904 arduino
SMBT3904...MMBT3904
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11 2012-08-21

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