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Número de pieza | MMBT3904 | |
Descripción | NPN Silicon Switching Transistors | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MMBT3904 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! NPN Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
• Complementary types: SMBT3906... MMBT3906
• SMBT3904S: For orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
SMBT3904...MMBT3904
Type
SMBT3904/MMBT3904
SMBT3904S
Marking
Pin Configuration
Package
s1A 1=B 2=E 3=C - - - SOT23
s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS ≤ 71°C, SOT23, SMBT3904
TS ≤ 115°C, SOT363, SMBT3904S
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
SMBT3904/MMBT3904
SMBT3904S
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
40
60
6
200
330
250
150
-65 ... 150
Value
≤ 240
≤ 140
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mV
°C
Unit
K/W
1 2012-08-21
http://www.Datasheet4U.com
1 page DC current gain hFE = ƒ(IC)
VCE = 1 V, normalized
10 3
125 °C
25 °C
10 2
-55 °C
SMBT3904...MMBT3904
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
2
mA
Ι C 10 2
5
10 1
5
V CE
EHP00756
V BE
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 mA10 0
IC
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 0
0
0.2 0.4 0.6 0.8 1.0 V 1.2
VBE sat , VCE sat
Total power dissipation Ptot = ƒ(TS)
SMBT3904/MMBT3904
9
pF
7
6
5
4
3
2
1
00
CEB
CCB
4
8
12
16 A
22
VCB(VEB
360
mW
300
270
240
210
180
150
120
90
60
30
00 15 30 45 60 75 90 105 120 °C 150
TS
5 2012-08-21
5 Page SMBT3904...MMBT3904
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11 2012-08-21
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet MMBT3904.PDF ] |
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