|
|
PDF AND9068 Data sheet ( Hoja de datos )
| Número de pieza | AND9068 | |
| Descripción | IGBT | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AND9068 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
AND9068/D
Reading ON Semiconductor
IGBT Datasheets
Abstract
The Insulated Gate Bipolar Transistor is a power switch
well suited for high power applications such as motor
control, UPS and solar inverters, and induction heating. If
the application requirements are well understood, the
correct IGBT can easily be selected from the electrical
properties provided in the manufacturers’ datasheet. This
application note describes the electrical parameters
provided in the ON Semiconductor IGBT datasheet.
Part Number
The part numbering convention for ON Semiconductor
IGBTs is shown in Figure 1. Many of the device ratings and
details are described in the part number and can be
understood using this code.
Figure 1. ON Semiconductor IGBT Part Numbering
Key
Brief
This section provides a description of the device and lists
its key features and typical applications.
http://onsemi.com
APPLICATION NOTE
Table 1. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
Pulsed collector current,
Tpulse limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
Diode pulsed current, Tpulse
limited by TJmax
Gate−emitter voltage
Power dissipation
@ TC = 25°C
@ TC = 100°C
Short circuit withstand time
VGE = 15 V, VCE = 400 V, TJ
v +150°C
Operating junction temperat-
ure range
VCES
IC
ICM
IF
IFM
VGE
PD
tSC
600
30
15
60
30
15
60
$20
130
55
10
V
A
A
A
A
V
W
ms
TJ
−55 to
°C
+150
Storage temperature range
Tstg
−55 to
+150
°C
Lead temperature for solder-
ing, 1/8” from case for
TSLD
260
°C
5 seconds
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only. Functional operation
above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Oper-
ating Conditions may affect device reliability.
Absolute Maximum Ratings
The absolute maximum ratings shown in Table 1 are
typical for an IGBT. This table sets the limits, both electrical
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 0
1
Publication Order Number:
AND9068/D
Free Datasheet http://www.Datasheet4U.com
1 page  
AND9068/D
Forward Transconductance, gfs
This is the amount of change in collector current for an
incremental change in the gate to emitter voltage, measured
in Siemens (or Mhos). It is specified at the room temperature
rated current of the device, and typically with the device in
full saturation, where a further increase in collector−emitter
voltage no longer leads to an additional increase in collector
current. A typical collector−emitter voltage used for this test
is 20 V. Figure 5 illustrates the gfs measurement.
Dynamic Characteristics
Figure 5. Illustration of the Measurement of IGBT gfs
Table 4. IGBT Dynamic Electrical Characteristics
Parameter
Test Conditions
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Gate charge total
Gate to emitter charge
Gate to collector charge
VCE = 480 V, IC = 15 A, VGE = 15 V
Symbol Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
− 2600 −
− 64 −
− 42 −
80
24
33
pF
nC
The dynamic electrical characteristics which include
device capacitances and gate charge are given in the
electrical table, as shown in Table 4.
IGBT capacitances are similar to those described for
power MOSFETs. The datasheet describes the measurable
terminal capacitances, Cies, Coes, and Cres. They are
specified in the electrical table at a fixed collector bias
voltage; however, the capacitances are voltage dependant,
as can be seen in Figure 6. The capacitances specified on the
datasheet are convenient and easily measured. They relate to
the pin to pin capacitances shown in Figure 7 and described
below.
10000
VGE = 0 V,
f = 1 MHz
1000
Cies
100
Coes
Cres
10
0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 6. IGBT Capacitance versus Collector−Emitter
Voltage Showing Voltage Dependance of Coes and
Cres
http://onsemi.com
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AND9068.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AND9068 | IGBT | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |