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PDF TSF20U60C Data sheet ( Hoja de datos )
| Número de pieza | TSF20U60C | |
| Descripción | (TSF20U45C / TSF20U60C) Trench MOS Barrier Schottky Rectifier | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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creat by ART
TSF20U45C thru TSF20U60C
Taiwan Semiconductor
Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs. max.
Weight: 1.7g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current (Note 1)
Voltage rate of change (Rated VR)
Isolation voltage from terminal to heatsink
t = 1 min
Breakdown voltage ( IR =1.0mA, Ta =25°C )
IF = 10A
Maximum instantaneous forward voltage
per diode ( Note2 )
IF = 20A
IF = 10A
IF = 20A
Maximum instantaneous reverse current per diode at
rated reverse voltage
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: 2.0 μs Pulse Width, f=1.0 kHz
Note 2: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle
SYMBOL
VRRM
IF(AV)
IFSM
IRRM
dV/dt
VAC
VBR
VF
VF
IR
RθjC
TJ
TSTG
TSF20U45C
TSF20U60C
45 60
20
10
180 200
0.5
10000
3
1500
2000
45 60
0.50
0.51
0.60
0.65
0.47
0.47
0.60 -
500
100
34
- 55 to +150
- 55 to +150
UNIT
V
A
A
A
V/μs
V
V
V
μA
mA
OC/W
OC
OC
Document Number: DS_D1401024
Version: C14
Free Datasheet http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSF20U60C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TSF20U60C | (TSF20U45C / TSF20U60C) Trench MOS Barrier Schottky Rectifier | Taiwan Semiconductor |
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