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PDF HY5116164C Data sheet ( Hoja de datos )
| Número de pieza | HY5116164C | |
| Descripción | (HY5116164C / HY5118164C) Extended Data Out mode | |
| Fabricantes | Hyundai | |
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HY5118164C,HY5116164C
1Mx16, Extended Data Out mode
DESCRIPTION
This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS
DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
design allow this device to achieve high performance and low power dissipation. Optional features are access time(60, 70
or 80ns) and refresh cycle(1K ref. or 4K ref.) and power consumption (Normal or Low power with self refresh). Hyundai’s
advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and
high reliability.
FEATURES
Ÿ Extended data out operation
Ÿ Read-modify-write Capability
Ÿ TTL compatible inputs and outputs
Ÿ /CAS-before-/RAS, /RAS-only, Hidden and
Self refresh capability
Ÿ Max. Active power dissipation
Speed
60
70
80
1K refresh
880mW
825mW
770mW
4K refresh
550mW
495mW
440mW
Ÿ Refresh cycle
Part number
HY5118164C
HY5116164C
Refresh
1K
4K
Normal
16ms
64ms
SL-part
256ms
Ÿ JEDEC standard pinout
Ÿ 42-pin Plastic SOJ (400mil)
44/50-pin plastic TSOP-II (400mil)
Ÿ Single power supply of 5V ± 10%
Ÿ Early write or output enable controlled write
Ÿ Fast access time and cycle time
Speed
60
70
80
tRAC
60ns
70ns
80ns
tCAC
15ns
20ns
20ns
tHPC
25ns
30ns
35ns
ORDERING INFORMATION
Part Name
HY5118164CJC
HY5118164CSLJC
HY5118164CTC
HY5118164CSLTC
HY5116164CJC
HY5116164CSLJC
HY5116164CTC
HY5116164CSLTC
Refresh
1K
1K
1K
1K
4K
4K
4K
4K
*SL : Low power with self refresh
Power
SL-part
SL-part
SL-part
SL-part
Package
42Pin SOJ
42Pin SOJ
44/50Pin TSOP-II
44/50Pin TSOP-II
42Pin SOJ
42Pin SOJ
44/50Pin TSOP-II
44/50Pin TSOP-II
This document is a general product description and is subject to change without notice. Hyundai electronics does not assume any responsibility for use of
circuits described. No patent licences are implied
Rev. 10/Sep.97
1
Hyundai Semiconductor
Free Datasheet http://www.Datasheet4U.com
1 page  
HY5118164C,HY5116164C
DC CHARACTERISTICS
(TA = 0°C to 70°C , VCC = 5V ± 10%, VSS = 0V, unless otherwise noted.)
Symbol
Parameter
Test condition
Speed
ICC1
Operating Current
/RAS, /CAS Cycling
tRC = tRC(min.)
ICC2 TTL Standby
Current
/RAS, /CAS ≥ VIH
Other inputs ≥ VSS
ICC3
/RAS-only Refresh
Current
/RAS Cycling,/CAS = VIH
tRC = tRC(min.)
60
70
80
SL-part
60
70
80
ICC4
ICC5
EDO mode Current
/CAS Cycling, /RAS = VIL
tHPC = tHPC(min.)
CMOS Standby
Current
/RAS = /CAS ≥ VCC - 0.2V
60
70
80
SL-part
ICC6 /CAS-before-/RAS /RAS & /CAS = 0.2V
Refresh Current
tRC = tRC(min.)
60
70
80
ICC7 Battery Back-up tRC=250µs (1K Ref), 62.5µs (4K Ref) tRAS ≤
Current (SL-part)
/CAS = 0.2V
300ns
/OE & /WE = VCC - 0.2V
Address = Vcc-0.2V or 0.2V
tRAS ≤
DQ0~DQ15 = Vcc-0.2, 0.2V or Open
1µs
ICC8 Self Refresh Current /RAS & /CAS = 0.2V
(SL-part)
Other pins are same as ICC7
Max. Current
1K Ref 4K Ref
160 100
150 90
140 80
22
11
160 100
150 90
140 80
140 120
120 100
100 80
11
200 200
160 100
150 90
140 80
Unit
mA
mA
mA
mA
mA
µA
mA
350 350
µA
450 450
350 350 µA
Note
1. ICC1, ICC3, ICC4 and ICC6 depend on output loading and cycle rates(tRC and tHPC).
2. Specified values are obtained with output unloaded.
3. ICC is specified as an average current. In ICC1, ICC3, ICC6, address can be changed only once while /RAS=VIL. In ICC4,
address can be changed maximum once while /CAS=VIH within one EDO mode cycle time tHPC.
1Mx16,EDO DRAM
Rev. 10/Sep.97
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HY5116164C.PDF ] | |
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