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PDF AUIRF7484Q Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7484Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97757
AUIRF7484Q
Features
l Advanced Planar Technology
l Low On-Resistance
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
S1
VAA
8D
(BR)DSS
S2
S3
7D
6 D RDS(on) max.
G4
5D
Top View
ID
40V
10m
14A
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
SO-8
AUIRF7484Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current
Continuous Drain Current
cPulsed Drain Current
ePower Dissipation
Linear Derating Factor
Gate-to-Source Voltage
fSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
hRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
40
14
11
110
2.5
0.02
± 8.0
230
See Fig. 16c, 16d, 19, 20
-55 to + 150
Units
V
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
RJL Junction-to-Drain Lead
eRJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
01/26/12
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRF7484Q
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
8 ID = 14A
7
6
VDS = 32V
VDS = 20V
VDS = 8V
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.10
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
1.4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1msec
1 10msec
Tc = 25°C
Tj = 150°C
0.1 Single Pulse
0 1 10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.Datasheet4U.com
5 Page 
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
AUIRF7484Q
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 )
12.40 ( .488 )
www.irf.com
11
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11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7484Q.PDF ] | |
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