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PDF AUIRF3315S Data sheet ( Hoja de datos )
| Número de pieza | AUIRF3315S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97733
AUTOMOTIVE GRADE
AUIRF3315S
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
G
HEXFET® Power MOSFET
D VDSS
RDS(on) max.
S ID
150V
82m
21A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
G
Gate
S
D
G
D2Pak
AUIRF3315S
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
21 A
15
84
3.8 W
94
VGS
EAS
IAR
EAR
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
0.63
± 20
350
12
9.4
2.5
W/°C
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
300
h Parameter
RJC
Junction-to-Case
Typ.
–––
Max.
1.6
Units
°C/W
gRJA Junction-to-Ambient (PCB Mount, steady state)
––– 40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/3/11
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRF3315S
www.irf.com
5
Free Datasheet http://www.Datasheet4U.com
5 Page 
AUIRF3315S
Ordering Information
Base part number Package Type
AUIRF3315S
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Complete Part Number
AUIRF3315S
AUIRF3315STRL
AUIRF3315STRR
www.irf.com
11
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF3315S.PDF ] | |
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