(PDF) HS1010E Datasheet - N channel 60V MOSFET

Número de pieza	HS1010E
Descripción	N channel 60V MOSFET
Fabricantes	Chengqi Semiconductor
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No Preview Available ! N channel 60V MOSFET HS1010E 1. Description The HS1010E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance. 2. Feature ● RDS(ON)≦9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability VDS RDS(on) ID 60 9 85 V mΩ A 3. Pin configuration Order Number HS1010E Package TO-220 TO-220 Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. Oct,2012-Ver1.0 www.homsemi.com 1/5 Free Datasheet http://www.0PDF.com 1 page N channel 60V MOSFET HS1010E Coperight@ Guangzhou Chengqi Semiconductor Co.,LTD.All rights reserved. Oct,2012-Ver1.0 www.homsemi.com 5/5 Free Datasheet http://www.0PDF.com 5 Page

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PDF HS1010E Data sheet ( Hoja de datos )