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PDF AS8510 Data sheet ( Hoja de datos )
| Número de pieza | AS8510 | |
| Descripción | Data Acquisition Device | |
| Fabricantes | ams | |
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Datasheet: AS8510 Data Acquisition Device for Battery Sensors
Please be patient while we update our brand image as
austriamicrosystems and TAOS are now ams.
www.ams.com
Free Datasheet http://www.nDatasheet.com
1 page  
AS8510
Datasheet - Pin Assignments
4 Pin Assignments
Figure 2. Pin Assignments (Top View)
RSHH
RSHL
REF
VCM
AVDD
AVSS
ETR
ETS
VBAT_IN
VBAT_GND
1
2
3
4
5
6
7
8
9
10
AS8510
20 INT
19 CLK
18 SDI
17 MEN
16 CHOP_CLK
15 DVDD
14 DVSS
13 SDO
12 SCLK
11 CS
4.1 Pin Descriptions
Table 1. Pin Descriptions
Pin Number
1
2
Pin Name
RSHH
RSHL
3 REF
4 VCM
5 AVDD
6 AVSS
7 ETR
8 ETS
9 VBAT_IN
10 VBAT_GND
11 CS
12 SCLK
13 SDO
Pin Type
Analog input
Analog output
Supply pad
Description
Positive Differential input for current channel
Negative differential input for current channel
Internal reference voltage to sigma-delta ADC; connect 100nF to
AVSS from this pin.
Common Mode voltage to the internal measurement path;
connect 100nF to AVSS from this pin.
+3.3V Analog Power-supply
0V Power-supply analog
Voltage channel single ended input
Analog input
Battery voltage (high) input
Battery voltage (low) input
Digital input with pull-up Chip select with an internal pull-up resistor (SPI Interface)
Digital input
Clock signal (SPI Interface)
Digital output
Serial Data Input (SPI Interface)
www.ams.com/AS8510
Revision 3.5
4 - 46
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5 Page 
AS8510
Datasheet - Electrical Characteristics
6.4.1 Differential Input Amplifier for Current Channel
Table 15. Differential Input Amplifier for Current Channel
Symbol
VIN_AMP
IIN_AMP
ICM
Parameter
Input voltage range
Input current 1, 11
Absolute input voltage range 2
Conditions
RSHH and RSHL
RSHH and RSHL@ +160mV input
voltage at 125ºC with PGA
Min Typ Max Units
-160 +160 mV
-50 2 50 nA
-160
+300
mV
G = G1
Gain1 3, 4, 9
I10
100
G = G2
Gain2 3, 4, 9
I200
40
G = G3
Gain3 3, 4, 9
I400
25
G = G4
e
Gain4 3, 4, 9
Gain deviation
I1500
i = 1, 2, 3, 4
5
0.9 * Gi
1.1 * Gi
fP_AMP
εT1
Pole frequency 4, 5
Gain drift with temperature 6
-20ºC to +65ºC
Gain 5, 25, referenced to room
temperature
15
kHz
±0.3 %
VOSDRIFT
Vos
Vos_ch
VNdin
THD
Offset drift with temperature 7, 10
Input referred offset 7, 10
Noise density 4, 8
Total harmonic distortion
After trim,
for temperature range -20 to +65ºC
Chopping enabled
For 150 Hz input signal
350 µV
350 µV
0 LSB
25 nV/√Hz
70 dB
Notes:
1. Leakage test accuracy is limited by tester resource accuracy and tester hardware.
2. For gain 100 PGA input common mode is 0V and the minimum supply is 3.15V.
3. The measurement ranges are referred only by the gain of input amplifier, while other parameters such as bandwidth etc. are pro-
grammed independently.
4. This parameter is not measured directly in production. It is measured indirectly via gain measurements of the whole path. It is guaran-
teed by design.
5. Pole frequency of input amplifier changes with GAIN. The number is valid for the gain at G1, while the bandwidth will be higher for other
ranges. This parameter is not measured in production.
6. Based on device evaluation. Not tested.
7. These offsets are cancelled if chopping enabled (default).
8. Noise density calculated by taking system bandwidth as 150Hz.
9. Refer to Measurement Ranges shown in Table 13.
10. No impact on the measurement path. If the chopping is enabled, both the offset and offset drift will be eliminated.
11. For negative input voltages up to -160mV below ground, Input leakage is typically -20nA @ 65ºC due to forward conductance of
protection diode.
www.ams.com/AS8510
Revision 3.5
10 - 46
Free Datasheet http://www.nDatasheet.com
11 Page | ||
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| PDF Descargar | [ Datasheet AS8510.PDF ] | |
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