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PDF BSS138BKW Data sheet ( Hoja de datos )

Número de pieza BSS138BKW
Descripción 320 mA N-channel Trench MOSFET
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! BSS138BKW Hoja de datos, Descripción, Manual

BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 12 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1.5 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 320 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 320 mA; - 1 1.6
resistance
Tj = 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
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BSS138BKW pdf
NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
10
0
0.02
0.01
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
017aaa028
1
103
102
FR4 PCB, standard footprint
101
1
10 102 103
tp (s)
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa029
0 0.02
10 0.01
1
103
102
101
FR4 PCB, mounting pad for drain 1 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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BSS138BKW arduino
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
DB
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
SOT323
E AX
y
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25 2.2
0.10 1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT323
IEC
REFERENCES
JEDEC
JEITA
SC-70
Fig 18. Package outline SOT323 (SC-70)
BSS138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2011. All rights reserved.
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