|
|
PDF SSM6J501NU Data sheet ( Hoja de datos )
| Número de pieza | SSM6J501NU | |
| Descripción | Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSM6J501NU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SSM6J501NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ)
SSM6J501NU
Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 19.0 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 15.3 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS −20 V
Gate-Source voltage
VGSS ±8 V
Drain current
Power dissipation
DC
Pulse
ID
IDP (Note 1)
PD(Note 2)
t≦10s
−10
−30
1
2
A
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg
−55 to 150
°C
1,2,5,6: Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
UDFN6B
3: Gate
4: Source
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
―
absolute maximum ratings.
TOSHIBA
2-2AA1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 8.5 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking(Top View)
65 4
SP1
1 23
Polarity marking
Equivalent Circuit(Top View)
65 4
Pin Condition(Top View)
65 4
123
Drain
Source
1 23
Polarity marking (on the top)
*Electrodes : on the bottom
1 2011-01-25
Free Datasheet http://www.datasheet-pdf.com/
1 page  
1000
rth – tw
b
100
a
10
1
0.001
Single pulse
a. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
b. Mounted on F4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 2.27 mm2)
0.01
0.1
1
10
100 1000
Pulse width tw (s)
SSM6J501NU
PD – Ta
1400 a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm2)
b: Mounted on FR4 board
1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.27mm2 )
a
1000
800
600
b
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2011-01-25
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6J501NU.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSM6J501NU | Field Effect Transistor Silicon P Channel MOS Type | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |