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PDF MDS9651 Data sheet ( Hoja de datos )
| Número de pieza | MDS9651 | |
| Descripción | Complementary N-P Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
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MDS9651
Complementary N-P Channel Trench MOSFET
General Description
The MDS9651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
N-Channel
VDS = 30V
ID = 6.9A @ VGS = 10V
RDS(ON)
<28mΩ @ VGS = 10V
<42mΩ @ VGS = 4.5V
P-Channel
VDS = -30V
ID = -6.0A @ VGS = -10V
RDS(ON)
<35mΩ @ VGS = -10V
<55mΩ @ VGS = -4.5V
Applications
Inverters
General purpose applications
5(D2)
6(D2)
7(D1)
8(D1)
D1 D2
4(G2)
3(S2)
2(G1)
1(S1)
G1
G2
S1 S2
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
N-Ch
P-Ch
30 -30
±20 ±20
6.9 -6.0
4.3 -4.1
30 -30
22
0.8 0.8
18 60.5
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Device
N-Ch
N-Ch
P-Ch
P-Ch
Symbol
RθJA
RθJC
RθJA
RθJC
Rating
62.5
60
62.5
40
Unit
oC/W
January 2009. Version 1.0
1 MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet-pdf.com/
1 page  
10
※ Note : ID = 6.9A
8
6
4
2
0
02468
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
1 ms 100 us
10 ms
100 ms
1s
DC
10-1
10-2
10-1
Single Pulse
Rθ j=a 62.5℃/W
Ta=25℃
100 101
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating
Area
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Crss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
10 20
VDS, Drain-Source Voltage [V]
30
Fig.8 Capacitance Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
Ta, Case Temperature [℃]
Fig.10 Maximum Drain Current
Vs. Case Temperature
150
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
※ Notes :
Duty Factor, D=t /t
12
PEAK TJ = PDM * Zθ Ja* Rθ J(at) + Ta
RΘ JA=62.5℃/W
10-3
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
January 2009. Version 1.0
5
MagnaChip Semiconductor Ltd.
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MDS9651.PDF ] | |
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