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PDF APQ84SN06AH Data sheet ( Hoja de datos )
| Número de pieza | APQ84SN06AH | |
| Descripción | 60V/84A N-Channel MOSFET | |
| Fabricantes | alpha pacific | |
| Logotipo |  |
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DEVICE SPECIFICATION
APQ84SN06AH
60V/84A N-Channel MOSFET
1 Description
These N-Channel enhancement mode power field
effect transistors are produced using planar stripe,
DMOS technology.
This advanced technology has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulse in the avalanche and commutation
mode. These devices are well suited for high
efficiency switched mode power supplies, active
power factor correction based on half bridge
topology.
2 Features
• 60V / 84A
• RDS(on) =9mΩ(typ)，VGS =10V, ID =42A
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability..
3 Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
V DSS
ID
Drain-Source Voltage
Drain Current - Continuous (TC= 25°C)
- Continuous (TC= 100°C)
I DM
V GS
E AS
I AR
E AR
dv/dt
Drain Current – Pulsed ①
Gate-Source Voltage
Single Pulsed Avalanche Energy ②
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ③
PD Power Dissipation (TC= 25°C)
- De-ate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL soldering temperature for 10 seconds
* note :
① Repetitive Rating: Pulse width limited by maximum junction temperature.
② VDD=30V, starting TJ=25℃, L=TBD, RG=0Ω, IAS=84A
③ ISD ≤ 84A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150℃.
APQ84SN06AH-XXM0
APQ84SN06AH-XXJ0
TO-220
60
84
50.4
336
± 20
320
50
17
4.0
100
0.8
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Rev：C
1/8
Free Datasheet http://www.datasheet-pdf.com/
1 page  
DEVICE SPECIFICATION
APQ84SN06AH
60V/84A N-Channel MOSFET
Rev：C
5/8
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet APQ84SN06AH.PDF ] | |
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