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PDF PSMN7R6-60PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN7R6-60PS | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
Rev. 03 — 28 October 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13;
see Figure 9
VGS = 10 V; ID = 25 A;
VDS = 30 V; see Figure 15;
see Figure 14
VGS = 10 V; Tj(init) = 25 °C;
ID = 92 A; Vsup ≤ 100 V;
RGS = 50 Ω; unclamped
Min Typ Max Unit
- - 60 V
- - 92 A
- - 149 W
- 5.9 7.8 mΩ
- 10.6 - nC
- - 110 mJ
Free
Datasheet
1 page  
NXP Semiconductors
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
VGSth
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13; see Figure 9
RG gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
QGS
QGS(th)
total gate charge
gate-source charge
pre-threshold gate-source
charge
ID = 25 A; VDS = 30 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold gate-source
charge
QGD gate-drain charge
ID = 25 A; VDS = 30 V; VGS = 10 V;
see Figure 15; see Figure 14
VGS(pl)
gate-source plateau voltage
ID = 25 A; VDS = 30 V; see Figure
14; see Figure 15
Ciss input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16; see
Figure 8
Coss
Crss
td(on)
tr
td(off)
tf
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16; see
Figure 8
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
Min Typ Max Unit
54 - - V
60 - - V
234V
1- - V
- - 4.6 V
- 0.05 10 µA
- - 100 µA
- 2 100 nA
- 2 100 nA
-
13.3 18
mΩ
- 5.9 7.8 mΩ
- 0.98 - Ω
- 38.7 - nC
- 12.9 - nC
- 6.9 - nC
- 6 - nC
- 10.6 - nC
- 5.6 - V
- 2651 - pF
- 342 - pF
- 183 - pF
- 19 - ns
- 21 - ns
- 37 - ns
- 13 - ns
PSMN7R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
© NXP B.V. 2010. All rights reserved.
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NXP Semiconductors
PSMN7R6-60PS
N-channel 60 V 7.8 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
PSMN7R6-60PS v.3
Modifications:
20101028
Product data sheet
• Various changes to content.
PSMN7R6-60PS v.2 20100122
Product data sheet
Change notice
-
-
Supersedes
PSMN7R6-60PS v.2
-
PSMN7R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 28 October 2010
© NXP B.V. 2010. All rights reserved.
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