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Número de pieza | HY1506U | |
Descripción | (HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET | |
Fabricantes | HOOYI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HY1506U (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 60V/55A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
G
D
S
TO-220
Applications
S
D
G
I-PAK(TO-251)
D
TO-262
S
D
G
• Power Management for Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1506
Yÿ YWWJ G
UI
HY1506 HY1506
Yÿ YWWJ G Yÿ YWWJ G
Package Code
P : TO220-3L D : I-PAK
Date Code
YYWW
Assembly Material
G : Lead Free Device
I : TO262-3L
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi-semi.com
Free Datasheet http://www.datasheet4u.net/
1 page HY1506P/U/I
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 7,8,9,10V
GS
140
120 6V
100
80
5.5V
60
40 5V
20 4.5V
4V
0
012345
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
17
16
15
V =4.5V
GS
14
13
V =10V
GS
12
11
10
9
0 20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
20
I =28A
DS
18
16
14
12
10
8
6
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi-semi.com
Free Datasheet http://www.datasheet4u.net/
5 Page HY1506P/U/I
Devices Per Unit
Package Type
TO-220
TO-251
TO-262
Unit
Tube
Tube
Tube
Classification Profile
Quantity
50
72
50
11
www.hooyi-semi.com
Free Datasheet http://www.datasheet4u.net/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet HY1506U.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY1506I | (HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET | HOOYI |
HY1506P | N-Channel Enhancement Mode MOSFET | HOOYI |
HY1506U | (HY1506U / HY1506I) N-Channel Enhancement Mode MOSFET | HOOYI |
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