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Número de pieza | SY2305 | |
Descripción | P-Channel logic enhancement mode power field effect transistors | |
Fabricantes | SANY | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SY2305 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! SY2305
DESCRIPTION
The SY2305 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
-15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V
-15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V
-15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
PIN CONFIGURATION(SOT-23-3L)
PART MARKING
http://www.szsemi.com
TEL:0755-36858333
PAGE: 1
Free Datasheet http://www.datasheet4u.net/
1 page TYPICAL CHARACTERISTICS
SY2305
http://www.szsemi.com
TEL:0755-36858333
PAGE: 5
Free Datasheet http://www.datasheet4u.net/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SY2305.PDF ] |
Número de pieza | Descripción | Fabricantes |
SY2305 | P-Channel logic enhancement mode power field effect transistors | SANY |
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