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Número de pieza | ESAC63-006R | |
Descripción | Silicon Diode | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ESAC63-006R (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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Device Name : SILICON DIODE
Type Name : ESAC63-006R
Spec. No.
: MS5D3019
DATE
DRAWN JAN.-25-‘07
CHECKED JAN.-25-‘07
CHECKED JAN.-25-‘07
NAME
APPROVED
Fuji Electric Device Technology Co.,Ltd.
MS5D3019 1/12
H04-004-07b
Free Datasheet http://www.datasheet4u.com/
1 page Test
No.
Test
Items
Testing methods and Conditions
1 High Temp.
Storage
2 Low Temp.
Storage
3 Temperature
Humidity
Storage
4 Temperature
Humidity
Bias
5 Unsaturated
Pressurized
Vapor
6 Temperature
Cycle
7 Thermal
Shock
8 Steady state
Operating
life
9 Intermittent
Operating
life
10 High Temp.
Reverse
Bias
Temperature :Tstg max
Test duration : 1000h
Temperature :Tstg min
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000h
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VRRM× 0.8
Test duration : 1000h
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48h
High temp. side : Tstg max
Room temp. : 5~35℃
Low temp. side : Tstg min
Duration time : HT 30min,RT 5min LT 30min
Number of cycles : 100 cycles
Fluid : pure water(running water)
High temp. side : 100+0/-5°C
Low temp. side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100 cycles
Ta=25±5°C
Rated load
Test duration : 1000h
Tj=Tjmax ~50℃
3min ON, 3min OFF
Test duration : 10000cycles
Temperature : Ta=100 °C
Bias Voltage : VR=VRRM duty=1/2
Test duration : 1000h
Reference
Standard
EIAJ ED4701
EIAJ
ED4701/201
Sampling
number
22
Acceptance
number
EIAJ
ED4701/202
22
EIAJ
ED4701/103
test code C
22
EIAJ
ED4701/103
test code C
22
EIAJ
ED4701/103
test code F
22
EIAJ (0 : 1)
ED4701/105
22
EIAJ
ED4701/307
test code A
22
22
EIAJ
ED4701/106
EIAJ
ED4701/101
22
22
Failure Criteria
IR ≦USL x 2
VF≦USL x 1.1
USL : Upper specification Limit
Fuji Electric Device Technology Co.,Ltd.
MS5D3019 5/12
H04-004-03a
Free Datasheet http://www.datasheet4u.com/
5 Page Current Derating (Io-Tc)(max.)
160
150
140
130
DC
120 Square wave λ=180°
Sine wave λ=180°
110 Square wave λ=120°
100 360°
90 I0
Square wave λ=60°
λ VR=30V
V
80
0
5 10 15 20 25
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
30
Junction Capacitance Characteristic (typ.)
1000
100
10
1
10 100
VR Reverse Voltage (V)
Surge Capability
1000
100
10
1
10 100
Number of Cycles at 50Hz
Fuji Electric Device Technology Co.,Ltd.
MS5D3019 11/12
H04-004-03a
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet ESAC63-006R.PDF ] |
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