(PDF) ST2SD965 Datasheet - NPN Silicon Epitaxial Planar Transistor

Número de pieza	ST2SD965
Descripción	NPN Silicon Epitaxial Planar Transistor
Fabricantes	SEMTECH
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No Preview Available ! ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Features ․Low collector-emitter saturation voltage ․Satisfactory operation performances at high efficiency with the low voltage power supply TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta=25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Collector Current Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO ICP IC Ptot Tj TS Value 40 20 7 8 5 750 150 -55 to +150 Unit V V V A A mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 11/08/2003 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF ST2SD965 Data sheet ( Hoja de datos )