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PDF 2SD1691T Data sheet ( Hoja de datos )
| Número de pieza | 2SD1691T | |
| Descripción | NPN Silicon Epitaxial Power Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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ST 2SD1691T
NPN Silicon Epitaxial Power Transistor
For Low-Frequencey Power Amplifiers and
Mid-Speed Switching
The transistor is subdivided into three groups, M, L and
K, according to its DC-DC current gain.
E
C
B
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
TO-126 Plastic Package
Value
Unit
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC(DC)
5
A
Base Current
IB(DC)
1
A
Collector Current (pulse) 1)
IC(pulse)
8
A
Total power dissipation (Ta = 25 OC)
Total power dissipation (Tc = 25 OC)
Junction Temperature
Ptot 1.3
Ptot 20
Tj 150
W
W
OC
Storage Temperature Range
1) PW≦10ms, duty cycle≦50%.
Characteristics at Ta = 25 OC
Parameter
TS -55 to +150
OC
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 1 V, IC = 2 A
at VCE = 1 V, IC = 0.1 A
at VCE = 1 V, IC = 5 A
Collector Cutoff Current
at VCB = 50 V
Emitter Cutoff Current
at VEB = 7 V
Base Saturation Voltage
at IC = 2 A, IB = 0.2 A
Collector Saturation Voltage
at IC = 2 A, IB = 0.2 A
Turn-on time
Current Gain Group M
L
K
hFE
hFE
hFE
hFE
hFE
ICBO
IEBO
VBE(sat)
VCE(sat)
Ton
100
160
200
60
50
-
-
-
-
-
200
320
400
-
-
10
10
1.2
0.3
1
-
-
-
-
-
µA
µA
V
V
µs
Storage time at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 Ω, VCC = 10 V
Tstg
- 2.5 µs
Fall time
tf - 1 µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
Free Datasheet http://www.datasheet4u.com/
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