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PDF AON3408 Data sheet ( Hoja de datos )
| Número de pieza | AON3408 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Freescale | |
| Logotipo |  |
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AON3408
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON3408 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow
a Kelvin connection to the source, which may be used to bypass the source inductance. Standard
Product AON3408 is Pb-free (meets ROHS & Sony259 specifications).
Features
VDS (V) = 30V
ID =11A (VGGSS = 10V)
RDS(ON) < 14.5mΩ (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 4.5V)
RDS(ON) < 45mΩ (VGS = 2.5V)
D
SD
SD
S DG
GD
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
IDSM
IDM
Power Dissipation
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.2
40
3.0
1.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
65
25
Max
42
100
35
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AON3408.PDF ] | |
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