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Número de pieza | AON3402 | |
Descripción | Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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No Preview Available ! AON3402
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON3402 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON3402 is
Pb-free (meets ROHS & Sony 259 specifications).
AON3402L is a Green Product ordering option.
AON3402 and AON3402L are electrically identical.
Features
VDS (V) = 20V
ID = 12A (VGS = 4.5V)
RDS(ON) < 13mΩ (VGS = 4.5V)
RDS(ON) < 17mΩ (VGS = 2.5V)
RDS(ON) < 26mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
Top View
DFN 3x3
Bottom View
D
D
D
D
S
S
S
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
D
D
DG
D
Maximum
20
±12
12
9.6
40
3
1.9
-55 to 150
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
65
25
Max
42
100
35
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AON3402.PDF ] |
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